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Design and Performance Analysis Of Ultra Low Power 6T SRAM Using Adiabatic Technique

机译:基于FpGa的超低功耗6T sRam设计与性能分析   绝热技术

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摘要

Power consumption has become a critical concern in both high performance andportable applications. Methods for power reduction based on the application ofadiabatic techniques to CMOS circuits have recently come under renewedinvestigation. In thermodynamics, an adiabatic energy transfer through adissipative medium is one in which losses are made arbitrarily small by causingthe transfer to occur sufficiently slowly. In this work adiabatic technique isused for reduction of average power dissipation. Simulation of 6T SRAM cell hasbeen done for 180nm CMOS technology. It shows that average power dissipation isreduced up to 75% using adiabatic technique and also shows the effect on staticnoise margin.
机译:在高性能和便携式应用中,功耗已成为至关重要的问题。基于绝热技术在CMOS电路上的应用以降低功耗的方法近来正在重新研究。在热力学中,通过耗散介质的绝热能量转移是通过使转移发生得足够慢而使损失任意减小的一种方法。在这项工作中,绝热技术用于降低平均功耗。已经针对180nm CMOS技术完成了6T SRAM单元的仿真。结果表明,采用绝热技术可将平均功耗降低多达75%,并且还显示出对静噪裕度的影响。

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